刘兴强，男，1987年6月出生，博士，教授，博士生导师

教学单位：电子科学与技术系

研究领域：微电子学与固体电子学 研究方向：低维半导体电子器件

Email：liuxq@hnu.edu.cn

教育背景

• 2010年9月-2015年7月 武汉大学物理学院 凝聚态物理学 博士 导师：廖蕾 教授

• 2005年9月-2009年7月 河南师范大学物理学院 物理学 本科

工作履历

• 2022年-至今 湖南大学物理与微电子科学学院 教授

• 2017年-2021年 湖南大学物理与微电子科学学院 副教授

• 2015年-2017年 中国科学院北京纳米能源与系统研究所 助理研究员

研究领域

1.低功耗负电容晶体管与隧穿晶体管；

2.与硅基技术融合的低维半导体器件

科研项目

1.自然科学基金青年项目，61704052，22万，高性能p型NiOx/单壁碳纳米管复合薄膜晶体管研制及物性研究，已结题；

2. 自然科学基金面上项目，51872084，60万，基于压电光电子学效应的高性能整流接触MoS2光探测器研制，在研；

3.科技部重点研发项目（课题三子课题），2018YFB0406603，53万，氮化物半导体自旋性质及自旋电子器件研究，已结题；

4.湖南省自然科学基金青年项目，2018JJ3066，5万，高性能MoS2负电容晶体管研制及射频特性研究，已结题；

5. 湖南省自然科学基金优秀青年项目，2021JJ20028，20万，低功耗金属氧化物薄膜晶体管研制及逻辑电路构建，在研；

学术成果

1. Liu, X.; Wang, C.; Cai, B.; Xiao, X.; Guo, S.; Fan, Z.*;Li, J.; Duan, X.; Liao, L.*, Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotube Hybrid Film for Unique Performance Transistors. Nano Lett. 2012, 12 (7), 3596-3601.

2. Liu, X.; Liu, W.; Xiao, X.; Wang, C.; Fan, Z.; Qu, Y.; Cai, B.; Guo, S.; Li, J.; Jiang, C.; Duan, X.; Liao, L.*, High performance amorphous ZnMgO/carbon nanotube composite thin-film transistors with a tunable threshold voltage. Nanoscale 2013, 5 (7), 2830-2834.

3. Liu, X.; Wang, C.; Xiao, X.; Wang, J.; Guo, S.; Jiang, C.; Yu, W. J.; Hu, W.; Li, J.; Liao, L.*, High mobility amorphous InGaZnO thin film transistor with single wall carbon nanotubes enhanced-current path. Appl. Phys. Lett. 2013, 103 (22).

4. Liu, X.; Jiang, L.; Zou, X.; Xiao, X.; Guo, S.; Jiang, C.; Liu, X.; Fan, Z.; Hu, W.; Chen, X.; Lu, W.; Hu, W.*; Liao, L.*, Scalable Integration of Indium Zinc Oxide/PhotosensitiveNanowire Composite Thin-Film Transistors for Transparent Multicolor Photodetectors Array. Adv. Mater. 2014, 26 (18), 2919-2924.

5. Liu, X.; Liu, X.; Wang, J.; Liao, C.; Xiao, X.; Guo, S.; Jiang, C.; Fan, Z.; Wang, T.; Chen, X.; Lu, W.; Hu, W.*; Liao, L.*, Transparent, High-Performance Thin-Film Transistors with an InGaZnO/Aligned-SnO2-Nanowire Composite and their Application in Photodetectors. Adv. Mater. 2014, 26 (43), 7399-7404.

6. Liu, X.; Wan, D.; Wu, Y.; Xiao, X.; Guo, S.; Jiang, C.; Li, J.; Chen, T.; Duan, X.; Fan, Z.; Liao, L.*, Transparent megahertz circuits from solution-processed composite thin films. Nanoscale 2016, 8 (15), 7978-7983.

7. Liu, X.; Miao, J.; Liao, L.*; Hu, W., High-mobility transparent amorphous metal oxide/nanostructure composite thin film transistors with enhanced-current paths for potential high-speed flexible electronics. Journal of Materials Chemistry C 2014, 2 (7), 1201-1208.

8. Li, W. (#); Liu, X. (#); Wang, Y.; Dai, Z.; Wu, W.; Cheng, L.; Zhang, Y.; Liu, Q.; Xiao, X.; Jiang, C., Design of high-performance memristor cell using W-implanted SiO2 films. Appl. Phys. Lett. 2016, 108 (15).

9. Liu, X. (#); Yang, X. (#); Gao, G. (#); Yang, Z.; Liu, H.; Li, Q.; Lou, Z.; Shen, G.; Liao, L.; Pan, C.*; Wang, Z. L., Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires. ACS Nano 2016, 10 (8), 7451-7457.

10. Xu, Q. (#); Liu, X. (#); Wan, B. (#); Yang, Z.; Li, F.; Lu, J.; Hu, G.; Pan, C.*; Wang, Z. L., In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications. ACS Nano 2018, 12 (9), 9608-9616.

11. Liu, X. (#); Liang, R. (#); Gao, G. (#); Pan, C.*; Jiang, C.; Xu, Q.; Luo, J.; Zou, X.; Yang, Z.; Liao, L.*; Wang, Z. L.*, MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit. Adv. Mater. 2018, 30 (28).

12. Gao, G. (#); Wan, B. (#); Liu, X. (#); Sun, Q.*; Yang, X.; Wang, L.; Pan, C.*; Wang, Z. L.*, Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus. Adv. Mater. 2018, 30 (13).

13. Zhang, X.(#); Liu, X.(#); Zhang, Y.; Bao, R.; Peng, D.; Li, T.; Gao, G.; Guo, W.; Pan, C., Rational design of an ITO/CuS nanosheet network composite film as a counter electrode for flexible dye sensitized solar cells. Journal of Materials Chemistry C 2016, 4 (34), 8130-8134.

14. Zhao, X.*; Chen, P.; Liu, X.*; Li, G.; Zou, X.; Liu, Y.; Wu, Q.; Liu, Y.*; Yu, W. J.; Liao, L., Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions. Nano Research 2020, 13 (8), 2085-2090.

15. Jiang, B.; Huang, H.; Chen, R.; Li, G.; Flandre, D.; Wan, D.; Chen, X.; Liu, X.*; Ye, C.*; Liao, L., Black phosphorus field effect transistors stable in harsh conditions via surface engineering. Appl. Phys. Lett. 2020, 117 (11).

16. Wan, D.; Huang, H.; Wang, Z.; Liu, X.*; Liao, L., Recent advances in long-term stable black phosphorus transistors. Nanoscale 2020, 12 (39), 20089-20099.

17. Lv, Y.; Qin, W.; Wang, C.; Liao, L.*; Liu, X.*, Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors. Advanced Electronic Materials 2019, 5 (1), 1800569.

18. Su, M.; Zou, X.*; Gong, Y.; Wang, J.; Liu, Y.; Ho, J. C.; Liu, X.*; Liao, L., Sub-kT/q switching in In2O3 nanowire negative capacitance field-effect transistors. Nanoscale 2018, 10 (40), 19131-19139.

19. Wang, Y.; Wu, F.; Liu, X.*; Lin, J.; Chen, J.-Y.; Wu, W.-W.; Wei, J.; Liu, Y.; Liu, Q.*; Liao, L.*, High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer. Appl. Phys. Lett. 2019, 115 (19), 193503.

20. Huang, H.; Liu, X.*; Liu, F.; Liu, C.; Liang, X.; Zhang, Z.; Liu, K.; Zhao, X.*; Liao, L.*, Comprehensive insights into effect of van der Waals contact on carbon nanotube network field-effect transistors. Appl. Phys. Lett. 2019, 115 (17), 173503.

21. Jiang, B.; Yang, Z.; Liu, X.*; Liu, Y.; Liao, L.*, Interface engineering for two-dimensional semiconductor transistors. Nano Today 2019, 25, 122-134.

22. Song, W.; Li, Y.; Zhang, K.; Zou, X.; Wang, J.; Kong, Y.; Chen, T.; Jiang, C.; Liu, C.; Liao, L.*; Liu, X.*, Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors. IEEE Trans. Electron Devices 2019, 66 (10), 4148-4150.

23. Zhang, Z.; Su, M.; Li, G.; Wang, J.; Zhang, X.; Ho, J. C.; Wang, C.; Wan, D.; Liu, X.*; Liao, L.*, Stable Hysteresis-Free MoS2 Transistors With Low-k/High-k Bilayer Gate Dielectrics. IEEE Electron Device Letters 2020, 41 (7), 1036-1039.